Examples of publications:

• E.P.Skipetrov, E.A.Zvereva, B.B.Kovalev, L.A.Skipetrova. "Pressure-induced insulator-metal transition in electron-irradiated Pb_1-xSn_xSe (x<0.03) alloys".
  Fiz. Tekh. Poluprovodn., 1998, v.32, N6, p.663-667 [Semiconductors, 1998, v.32, N6, p.594-598].
• E.P.Skipetrov, B.B.Kovalev, L.A.Skipetrova, E.A.Zvereva. "Energy spectrum and the nature of irradiation-induced defects in Pb_1-xSn_xSe alloys with inverse band structure".
  Semicond. Sci. Technol., 1998, v.13, N10, p.1134-1139.

Impurity-induced states

Examples of publications:

• E.P.Skipetrov. "Stabilization of the donor action of gallium in electron-irradiated Pb_1-xSn_xTe alloys". Fiz. Tekh. Poluprovodn., 1995, v.29, N8, p.1416-1424 [Semiconductors, 1995, v.29, N8, p.735-739.]
• E.P.Skipetrov, N.A.Chernova, E.I.Slyn'ko, Yu.K.Vygranenko. "Energy spectrum and parameters of deep impurity level in Pb_1-xGe_xTe alloys doped with Yb".
   Phys. Rev. B, 1999, v.59, N20, p.12928-12934.
• E.Skipetrov, E.Zvereva, L.Skipetrova, E.Slyn'ko. “Impurity-induced photoconductivity in gallium-doped Pb1-xGexTe alloys”.
  Physica B: Cond. Mat., 2001, v.302-303, N1-4, p.393-397.

High-pressure spectroscopy of defect states

Examples of publications:

• N.B.Brandt, E.P.Skipetrov. "High-pressure spectroscopy of deep states induced by electron irradiation in A⁴B⁶ semiconductors: (A Review)". Fiz. Nizk. Temp., 1996, v.22, N8, p.870-891 [ Low Temp. Phys., 1996, v.22, N8, p.665-682.]
• E.P.Skipetrov, N.A.Chernova. "Parameters of Yb-induced deep level in Pb_1-xGe_xTe doped with Yb".
  Phys. Stat. Sol. (b), 1999, v.211, N1, p.171-175.

Impurity-induced magnetism

Examples of publications:

• E.P.Skipetrov, N.A.Chernova, L.A.Skipetrova, A.V.Golubev, E.I.Slyn’ko. “Magnetic and electric properties of impurity states in Pb_1-xGe_xTe doped with ytterbium”. 
  Proceedings Fall Meeting of Material Research Society, Boston, Massachusetts, USA, 2000.

• E.P.Skipetrov, N.A.Chernova, L.A.Skipetrova, A.V.Golubev, E.I.Slyn'ko.
  "Magnetic properties of Pb1-xGexTe alloys doped with ytterbium". 
  Fiz.Tekh. Poluprovodn., 2001, v.35, N11, p.1306-1308. [Semiconductors, 2001, v.35, N11, p.1249-1251.] 
  English  and
  Russian  versions.