2D semiconductor structures We are investigating GaAs/Ga1-xAlxAs and InAs/InxGa1-xAs heterostructures, quantum wells and 1D conducting wires based on these materials. The main direction of research is transport and localization at low temperatures, low temperature photoconductivity. Example of publication: V.A.Kulbachinskii et al. “Electron mobilities in dimensional subbands of combinatively doped GaAs/GaAlAs heterojunctions with high density of 2D electrons” ZETF, 110, 1517 (1996). English translation: JETP, 83, 841 (1996).   Quantum dots Photoconductivity and photoluminescence at low temperatures, transport in quantum dots systems, localization of carriers. Example of publication:  V.A.Kulbachinskii et al. “Peculiarities of  optical and low-temperature transport of multi-layer InAs/GaAs structures with quantum dots” Physica B, 266, 185 (1999). Thermoelectric materials Thermopower and the energy spectrum of Bi2Te3 and Sb2Te3 based thermoelectric materials. Example of publication:  V.A.Kulbachinskii et al. “Valence band changes in Sb2-xInxTe3 and Sb2Te3-xSey by transport and Shubnikov de Haas effect” Phys. Rev. B, 52, 10915 (1995). Semimagnetic semiconductors Spin-glass transitions, the energy spectrum of narrow-gap semiconductors Hg1-xMnxSe3 type.  Example of publication: V.A.Kulbachinskii et al. “Galvanomagnetic properties of Hg1-xMnxTe1-ySey semimagnetic semiconductors” ZETF, 112, 1809 (1997). English translation: JETP, 85, 989 (1997). Graphite intercalation compounds; superconductivity of fullerides The energy spectrum of low stage acceptor type graphite intercalation compounds. Superconductivity in new types of fullerides. Example of publication: V.A.Kulbachinskii et al. “Shubnikov-de Haas effect in low-stage graphite intercalation compounds” Phys. Rev. B, 51, 10313 (1995).